InGaAsP Radiation Hardness and Post Irradiation Regeneration Behavior

被引：0
|
作者：
Lang, Robin [1 ]
Schoen, Jonas [1 ]
Godejohann, Birte-Julia [1 ]
Lefevre, Jeremie [2 ]
Boizot, Bruno [2 ]
Dimroth, Frank [1 ]
Lackner, David [1 ]
机构：
[1] Fraunhofer Inst Solar Energy Syst ISE, Freiburg, Germany
[2] Ecole Polytech, Lab Solides Irradies, CEA, CNRS, Paris, France
来源：
2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2020年
基金：
欧盟地平线“2020”;
关键词：
space solar cells; radiation hardness; InGaAsP; GaInAsP; MOVPE; irradiation; annealing;
D O I：
10.1109/pvsc45281.2020.9300639
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
As an answer to increased demand for more radiation tolerant solar cells for space applications, we investigate the dependence of radiation hardness of III-V compounds on composition of InGaAsP. Four solar cells with different composition were grown on InP and metamorphically on GaAs and irradiated with 1 MeV electrons. A simulation-based analysis was used to determine the material specific irradiation damage. In addition, the regeneration ability is investigated under typical operating conditions (60 degrees C and AM0 illumination) and under the ECSS standard. While a clear decrease in radiation damage compared to GaAs is observed in all samples, the effect is stronger with increasing InP-fraction. The irradiation induced defect recombination coefficient can be described with a linear function of InP-fraction.
引用
收藏
页码：2403 / 2405
页数：3
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