Dependence of magnetic anisotropies and critical temperatures on the hole concentration in ferromagnetic GaMnAs thin films

被引：1
|
作者：
Khazen, Kh. [1 ]
von Bardeleben, H. J.
Cantin, J. L.
Thevenard, L.
Largeau, L.
Mauguin, O.
Lemaitre, A.
机构：
[1] Univ Paris 06, INSP, UMR 7588 CNRS, F-75015 Paris, France
[2] Univ Paris 07, INSP, UMR 7588 CNRS, F-75015 Paris, France
[3] LPN, CNRS, F-91460 Marcoussis, France
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2007年 / 43卷 / 06期
关键词：
diluted magnetic semiconductors (DMSs); ferromagnetic resonance (FMR); GaMnAs; magnetic anisotropy;
D O I：
10.1109/TMAG.2007.893312
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The magnetic anisotropy constants and critical temperatures of a series of epitaxial GaMnAs thin films on GaAs with 7% Mn concentration in which the free hole concentration is progressively modified by hydrogen passivation is investigated by ferromagnetic resonance (FMR) spectroscopy. Ferromagnetism (FM) is lost for fully passivated films. In the FM films with the lowest hole concentration, the easy axis of magnetization is oriented perpendicular to the film plane and switches to in-plane [100] for higher hole concentrations. Temperature-dependent switching is equally observed. The numerical values of the uniaxial and cubic anisotropy constants are determined as a function of temperature and T-C(3).
引用
收藏
页码：3028 / 3030
页数：3
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