Doping dependence of thermopower and thermoelectricity in strongly correlated materials

被引:36
|
作者
Mukerjee, Subroto [1 ]
Moore, Joel E.
机构
[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Natl Lab, Div Sci Mat, Berkeley, CA 94720 USA
关键词
D O I
10.1063/1.2712775
中图分类号
O59 [应用物理学];
学科分类号
摘要
The search for efficient semiconductor thermoelectrics has been greatly aided by theoretical modeling of electron and phonon transports in bulk materials and nanocomposites. Recent experiments have studied thermoelectric transport in thermoelectrics that are "strongly correlated" and derived by doping Mott insulators. Here a unified theory of electrical and thermal transport in the atomic and "Heikes" limit is applied to understand recent experiments on sodium cobaltate and other doped Mott insulators at room temperature and above. For optimal electron filling, a broad class of narrow-bandwidth correlated materials is shown to have thermoelectric power factors as high as in the best semiconductors. (c) 2007 American Institute of Physics.
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