Temperature dependence of silicon carbide drift step recovery diodes injection electroluminescence

被引：1

作者：

Afanasyev, A. V. ^{[1
]}

Ivanov, B. V. ^{[1
]}

Ilyin, V. A. ^{[1
]}

Luchinin, V. V. ^{[1
]}

Serguschichev, K. A. ^{[1
]}

Smirnov, A. A. ^{[1
]}

Kardo-Sysoev, A. F. ^{[2
]}

机构：

[1] St Petersburg Electrotech Univ LETI, Ctr Diag & Microtechnol, St Petersburg 197376, Russia

[2] RAS, Ioffe Inst, St Petersburg 194021, Russia

来源：

3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016) | 2016年 / 741卷

关键词：

D O I：

10.1088/1742-6596/741/1/012175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The experimental results of silicon carbide (SiC) drift step recovery diodes (DSRDs) temperature dependence of injection electroluminescence (IEL) spectra were presented. It was shown that in the forward current range I-f = 0,1. 1 A the DSRD-dies temperature was raised from 327 K to 546 K correspondingly. While the short-wavelength maximum of IEL spectra lambda(max1) shifts from 392.4 to 402.1 nm and possesses dependence close to linear. On the basis of obtained calibration curves it is possible the non-contact temperature measuring of SiC-DSRDs by electroluminescence spectra at their operation in the generator of high voltage pulses.

引用

页数：5

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