A three-dimensionally silicon-micromachined fluidic amplifier device

被引：9
|
作者：
Kim, TH [1 ]
Cho, CH [1 ]
Cho, DID [1 ]
机构：
[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
来源：
JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 1998年 / 8卷 / 01期
关键词：
D O I：
10.1088/0960-1317/8/1/002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fluidic proportional amplifier device is fabricated using three-dimensional silicon micromachining. The technology involves deep vertical dry etching to fabricate the amplifier midsection, and three-dimensional passage etching from the back side, followed by glass anodic bonding on the front side. In order to optimize the device performance, the amplifier geometries are designed using three-dimensional CFD (computational fluid dynamics) flow analysis. The device performance is measured using nitrogen as the working fluid. The experimentally measured value of the amplifier gain is 3.15.
引用
收藏
页码：7 / 14
页数：8
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