Topological properties in ABA trilayer graphene under the irradiation of light

被引:4
|
作者
Chen, Liang [1 ]
机构
[1] Taishan Univ, Sch Phys & Elect Engn, Tai An 271000, Shandong, Peoples R China
基金
中国国家自然科学基金;
关键词
graphene; light; Flouqet theory; Hall; BAND-GAP;
D O I
10.1088/1674-1056/ab478e
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study ABA trilayer graphene under irradiation of a circularly polarized light. In high-frequency regime, the effective low-energy Hamiltonian is obtained based on the Floquet theory. With increasing circularly polarized light intensity, the band structure shows a band gap closing and reopening, which happen twice. The process of the band gap closing and reopening is accompanied with a topological phase transition. We investigate the Chern numbers and the anomalous Hall conductivities to confirm the topological phase transition. The interplay between light-induced circularity-dependent effective potential and effective sublattice potential is discussed.
引用
收藏
页数:4
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