ZnO;
exciton;
laser;
random structure;
Mott transition;
electron-hole plasma;
DYNAMICS;
D O I:
10.1088/1367-2630/16/9/093054
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
We investigate the origins of lasing emission in a scatterer-resonance-controlled random laser made of ZnO nanopowder over a wide temperature range (20-300 K). At higher temperatures (> 150 K), the lasing emission appears around exciton recombination energies and the lasing threshold carrier density is comparable to the Mott density, indicating that the resonance-controlled random laser is going toward showing excitonic lasing; at lower temperatures, random lasing is caused by usual electron-hole plasma recombination because of the threshold carrier density being much larger than the Mott density.