Origins of lasing emission in a resonance-controlled ZnO random laser

被引:16
|
作者
Nakamura, Toshihiro [1 ]
Fujiwara, Hideki [2 ]
Niyuki, Ryo [2 ]
Sasaki, Keiji [2 ]
Ishikawa, Yoshie [3 ]
Koshizaki, Naoto [4 ]
Tsuji, Takeshi [5 ]
Adachi, Sadao [1 ]
机构
[1] Gunma Univ, Fac Sci & Technol, Div Elect & Informat, Kiryu, Gunma 3768515, Japan
[2] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0010020, Japan
[3] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan
[4] Hokkaido Univ, Fac Engn, Div Quantum Sci & Engn, Sapporo, Hokkaido 0608628, Japan
[5] Kyushu Univ, Inst Mat Chem & Engn, Kasuga, Fukuoka 8168580, Japan
来源
NEW JOURNAL OF PHYSICS | 2014年 / 16卷
关键词
ZnO; exciton; laser; random structure; Mott transition; electron-hole plasma; DYNAMICS;
D O I
10.1088/1367-2630/16/9/093054
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate the origins of lasing emission in a scatterer-resonance-controlled random laser made of ZnO nanopowder over a wide temperature range (20-300 K). At higher temperatures (> 150 K), the lasing emission appears around exciton recombination energies and the lasing threshold carrier density is comparable to the Mott density, indicating that the resonance-controlled random laser is going toward showing excitonic lasing; at lower temperatures, random lasing is caused by usual electron-hole plasma recombination because of the threshold carrier density being much larger than the Mott density.
引用
收藏
页数:11
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