Optically stimulated luminescence dosimetry on CVD diamond films

被引：11
|
作者：
Barboza-Flores, M
Meléndrez, R
Gonçalves, JAN
Sandonato, GM
Chernov, V
Cruz-Zaragoza, E
Ocboa-Nuño, JD
Bernal, R
Cruz-Vázquez, C
Brown, F
机构：
[1] Univ Sonora, Centro Invest Fis, Hermosillo 86190, Sonora, Mexico
[2] Inst Nacl Pesquisas Espaciais, Lab Assoc Plasma, BR-12201970 Sao Jose Dos Campos, Brazil
[3] Natl Autonomous Univ Mexico, Inst Ciencias Nucl, Mexico City 04510, DF, Mexico
[4] Univ Sonora, Dept Invest Polimeros & Mat, Hermosillo 86190, Sonora, Mexico
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 11期
关键词：
D O I：
10.1002/pssa.200405167
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Diamond thin films chemically vapor deposited containing different B/C concentration in the range of 2000-20000 ppm were exposed to a P-ray dose of 0.8-3000 Gy. The optically stimulated luminescence (OSL) response of previously irradiated samples was excited with light of 470 nm at room temperature. The OSL decay curves were measured and found them to be a function of the dose exposure. The remaining thermoluminescence (TL) glow curve after optical stimulation indicates the existence of main charge carriers trapped in traps located at 323-523 K, meaning that the OSL emission appears to originate from charge trapped mainly at those traps related to the low temperature TL glow peaks. The results indicate that CVD diamond films perform well as OSL dosimeter for ionizing radiation. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2548 / 2552
页数：5
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