Bias stress and condensation of mobile trap agents in printed organic transistors

被引：7

作者：

Hiraoka, Maki ^{[1
]}

Yamada, Toshikazu ^{[1
]}

Hasegawa, Tatsuo ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, PRI, Tsukuba, Ibaraki 3058562, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 22期

关键词：

atomic force microscopy; carrier mobility; electrodes; hydrophilicity; hydrophobicity; ink jet printing; organic semiconductors; semiconductor thin films; stress effects; synthetic metals; thin film transistors; THIN-FILM TRANSISTORS; CIRCUITS;

D O I：

10.1063/1.3269604

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the relationship between the device instability and the presence of hydrophilic/hydrophobic boundary that is conventionally utilized to obtain well-defined film patterning in printed electronics devices. Pentacene thin-film transistors composed of inkjet-printed synthetic-metal electrodes exhibit notable bias stress effects whose appearance and disappearance depend critically on the positioning of the hydrophilic/hydrophobic boundary within the channel. The Kelvin probe force microscopy measurements revealed that the bias-stress effect is originated in the temporal evolution of trapped charge densities accumulated at the hydrophilic/hydrophobic boundary, in which the mobile nature of trap agents on the hydrophilic surface take crucial role.

引用

页数：3

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