Irradiation resistance of preceramic paper-derived SiCf/SiC laminated composites

被引:5
|
作者
Li, Ke [1 ,2 ]
Kashkarov, Egor [2 ]
Ma, Hailiang [1 ]
Fan, Ping [1 ]
Zhang, Qiaoli [1 ]
Zhang, Peng [3 ]
Cao, Xingzhong [3 ]
Zhang, Jilong [4 ]
Wu, Zhaohui [4 ]
Lider, Andrey [2 ]
Travitzky, Nahum [2 ,5 ]
Yuan, Daqing [1 ]
机构
[1] China Inst Atom Energy, Beijing 102413, Peoples R China
[2] Natl Res Tomsk Polytech Univ, Tomsk 634050, Russia
[3] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
[4] State Nucl Secur Technol Ctr, Beijing 102401, Peoples R China
[5] Friedrich Alexander Univ Erlangen Nurnberg, Dept Mat Sci Glass & Ceram, D-91054 Erlangen, Germany
基金
中国国家自然科学基金;
关键词
RAMAN-SPECTROSCOPY; ION IRRADIATION; POSITRON; DEFECTS; DISPLACEMENT; DAMAGE; BEAM;
D O I
10.1007/s10853-022-07294-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Influence of the ion irradiation at elevated temperatures on the novel preceramic paper-derived SiCf/SiC laminated composites fabricated by spark plasma sintering was investigated. The composites were subjected to high-dose simultaneous irradiation of silicon (Si) ions at 400 degrees C. Irradiation induces amorphization of the damaged area up to 30 dpa, and then recrystallization of amorphous regions with increasing dose occur. No evidence of cavities was found in SiCf/SiC composites irradiated by silicon ions up to 100 dpa. The irradiated composites pre-injected with 5000 appm He displays low swelling (similar to 0.3%). The irradiation with Si ions may suppress the cavity nucleation and they growth in SiC layers.
引用
收藏
页码:10153 / 10166
页数:14
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