Nano-scale effects of swift heavy ion irradiation in SiOx layers and multilayers

被引：14
|
作者：
Arnoldbik, W. M.
Knoesen, D.
Tomozeiu, N.
Habraken, F. H. P. M.
机构：
[1] Univ Utrecht, Dept Phys & Astron, Debye Inst, NL-3508 TA Utrecht, Netherlands
[2] Univ Western Cape, Dept Phys, ZA-7535 Bellville, South Africa
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 258卷 / 01期
关键词：
silicon dioxide; amorphous silicon; phase separation; multilayers; nanostructures; MeV ion beam irradiation;
D O I：
10.1016/j.nimb.2006.12.103
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Irradiation of SiOx layers and multilayers (0 <= x <= 2) with swift heavy ions gives rise to a rich variety of phenomena. These phenomena imply displacement of atoms inside the layer structure, removal of species from the material by electronic sputtering or molecule formation, the extent of which depends strongly on the x-value and irradiation parameters. Other phenomena are phase separation inside the material and modifications on the nano-scale at Si/SiOx interfaces. The paper briefly reviews these phenomena and presents new data concerning nand-scale modifications in the multilayers. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：199 / 204
页数：6
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