A solar cell based on sp2 carbonaceous film/n-type silicon heterojunction

被引：2
|
作者：
Yu, HA
Kaneko, T
Otani, S
Sasaki, Y
Suhng, Y
Yoshimura, S
机构：
[1] Tokai Univ, Sch High Technol Human Welf, Dept Mat Sci & Technol, Shizuoka 41003, Japan
[2] Gunma Univ, Fac Engn, Dept Elect & Elect Engn, Gunma 376, Japan
[3] ERATO, JST, Yoshimura Pi Electron Mat Project, Tama Ku, Kanagawa 214, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1998年 / 37卷 / 01期
关键词：
heterojunction; solar cell; carbonaceous thin film; chemical vapor deposition;
D O I：
10.1143/JJAP.37.59
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A solar cell with carbonaceous thin film/n-type silicon (Gin-Si) was fabricated utilizing a process in which an sp(2) arranged carbonaceous thin film was deposited on an n-type silicon substrate by chemical vapor deposition of 2,5-dimethyl-p-benzoquinone at 500 degrees C. The C/n-Si solar cell has a hetero-type junction with a junction barrier of 0.54 eV and a depletion layer of 1.1 mu m in thickness at zero bias. Under simulated light of 15 mW . cm(-2), the C/n-Si cell gives an energy conversion efficiency of 6.45% and an intrinsic energy conversion efficiency of about 13%.
引用
收藏
页码：59 / 63
页数：5
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