Application of non-linear theory to analysis of Benedicks effect in semiconductors

被引:0
|
作者
Piotrowski, T. [1 ]
Jung, W. [1 ]
Sikorski, S. [1 ]
机构
[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
关键词
D O I
10.1002/pssa.200674126
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Benedicks thermovoltage resulting from non-symmetric distribution of temperature gradients for different surface recombinations on sample surfaces has been determined in this paper using non-linear system of transport equations. Density distributions of generalised Price internal current J(p), taking into account the excess carrier generation and Gamma potential being the measure of charge carrier injection have also been determined. Minority carrier distributions and quasi-fermi levels variations for electron and holes resulting from Fermi level splitting due to thermoinjection have been calculated. Quasi-fermi level variations were used for determination thermo emf values. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页码:1063 / 1067
页数:5
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