A quantum dot asymmetric self-gated nanowire FET for high sensitive detection

被引：0

作者：

Shi, Zhangchun ^{[1
]}

Yang, Xiaohong ^{[1
]}

Nie, Chenglei ^{[1
]}

Yin, Weihong ^{[1
]}

Han, Qin ^{[1
]}

Ni, Haiqiao ^{[2
]}

Niu, Zhichuan ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

AIP ADVANCES | 2015年 / 5卷 / 01期

基金：

中国国家自然科学基金;

关键词：

ELECTRON-MOBILITY;

D O I：

10.1063/1.4905787

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present a novel device for weak light detection based on self-gated nanowire field effect structure with embedded quantum dots beside the nanowire current channel. The quantum dot with high localization energy will make the device work at high detecting temperature and the nano-channel structure will provide high photocurrent gain. Simulation has been done to optimize the structure, explain the working principle and electrical properties of the devices. The nonlinear current-voltage characteristics have been demonstrated at different temperatures. The responsivity of the device is proven to be more than 4.8 x 10(6)A/Wat 50 K. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

引用

页数：6

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