Low-Frequency Noise and Passive Imaging With 670 GHz HEMT Low-Noise Amplifiers

被引：21

作者：

Grossman, Erich N. ^{[1
]}

Leong, Kevin ^{[2
]}

Mei, Xiaobing ^{[2
]}

Deal, William ^{[2
]}

机构：

[1] Natl Inst Stand & Technol, Boulder, CO 80305 USA

[2] Northrop Grumman Corp, Redondo Beach, CA 90278 USA

来源：

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY | 2014年 / 4卷 / 06期

关键词：

Imaging; passive; submillimeter (submm); terahertz (THz); 1/f-noise; HEMT; InP;

D O I：

10.1109/TTHZ.2014.2352035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We combine newly developed InP HEMT amplifiers operating at 670 GHz with a zero-bias diode (ZBD) in order to investigate limits on passive imaging performance possible with fully uncooled, direct-detection technology. Noise-equivalent temperature difference (NETD) values under 2 K are found for reference conditions (30 Hz modulation). However, noise spectra continue to fall approximately as 1/f out to "knee" frequencies of several hundred hertz (Hz) and spectral densities of similar to 0.12 K/Hz(1/2) for the current, somewhat gain-starved, amplifiers. The amplifier alone contributes 0.043 K/Hz(1/2). These results indicate that modest-sized, rapidly scanned arrays should provide real-time, passive imaging-desired for standoff security screening and other applications-with the same image quality as cryogenic bolometer arrays.

引用

页码：749 / 752

页数：4

共 50 条

[1] Passive 670 GHz Imaging with Uncooled Low-Noise HEMT Amplifiers coupled to Zero-bias Diodes.
Grossman, E. N.
Leong, K.
Mei, X. B.
Deal, W. R.
PASSIVE AND ACTIVE MILLIMETER-WAVE IMAGING XVII, 2014, 9078
[2] 94 GHZ LOW-NOISE HEMT
CHAO, PC
DUH, KHG
HO, P
SMITH, PM
BALLINGALL, JM
JABRA, AA
TIBERIO, RC
ELECTRONICS LETTERS, 1989, 25 (08) : 504 - 505
[3] 32-GHZ CRYOGENICALLY COOLED HEMT LOW-NOISE AMPLIFIERS
DUH, KHG
KOPP, WF
HO, P
CHAO, PC
KO, MY
SMITH, PM
BALLINGALL, JM
BAUTISTA, JJ
ORTIZ, GG
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (08) : 1528 - 1535
[4] 160-270-GHz InP HEMT MMIC Low-Noise Amplifiers
Varonen, M.
Larkoski, P.
Fung, A.
Samoska, L.
Kangaslahti, P.
Gaier, T.
Lai, R.
Sarkozy, S.
2012 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), 2012,
[5] LOW-NOISE LOW-FREQUENCY AMPLIFIER
OVSYANNIKOV, GA
PROKLOV, SV
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1988, 31 (03) : 667 - 669
[6] 36.0 - 40.0 GHZ HEMT LOW-NOISE AMPLIFIER
SHOLLEY, M
BERENZ, J
NAKANO, K
SAWIRES, R
NICHOLS, A
ABELL, J
MICROWAVE JOURNAL, 1985, 28 (05) : 92 - &
[7] LOW-NOISE LOW-FREQUENCY PREAMPLIFIER.
Buchkovskii, I.A.
Andrushchak, M.S.
Rarenko, I.M.
Instruments and experimental techniques New York, 1982, 25 (5 pt 1): : 1153 - 1154
[8] On the noise resistance of HEMT's for improving the performance of microwave low-noise amplifiers
Caddemi, A
Sannino, M
IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, PROCEEDINGS, 1997, : 139 - 145
[9] Coplanar 94 GHz metamorphic HEMT low noise amplifiers
Karkkainen, Mikko
Varonen, Mikko
Halonen, Kari A. I.
Weber, Rainer
Leuther, Arnulf
Seelmann-Eggebert, Matthias
Kantanen, Mikko
Karttaavi, Timo
Narhi, Tapani
IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2006 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2006, 2006, : 29 - 32
[10] TRANSISTORS AND LOW-NOISE HEMT
BELHADJ, A
DUMAS, JM
VUCHENER, C
PAUGAM, J
AUDREN, P
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1988, 43 (241): : 219 - 220

← 1 2 3 4 5 →