Persistent excited conductivity induced by proton irradiation in a-Si:H

被引：7
|
作者：
Amekura, H
Kishimoto, N
Kono, K
机构：
[1] Natl Res Inst Met, Tsukuba, Ibaraki 305, Japan
[2] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany
来源：
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷
关键词：
radiation induced conductivity; a-Si : H; radiation damage; PEC; Staebler-Wronski effect;
D O I：
10.4028/www.scientific.net/MSF.258-263.599
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Radiation induced conductivity (RIG) of a-Si:H has been studied under 17 MeV proton irradiation. Electric conductivity increases during the proton irradiation, and the conductivity enhancement remains, to some degree, even after stopping the irradiation. At T less than or equal to 400 K, the protons cause the persistent excited conductivity (PEC). The PEC continues longer at the lower temperatures. At T = 200K, the PEC sustains itself over 30 hours, after the irradiation for 2 min. Simultaneously with occurrence of the PEG, a hump around E = 1.9 eV appears in the photoconductivity spectrum. The PEC disappears after annealing above T = 450 K.
引用
收藏
页码：599 / 604
页数：6
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