Micropipes: Hollow tubes in silicon carbide

被引：0
|
作者：
Heindl, J [1 ]
Strunk, HP [1 ]
Heydemann, VD [1 ]
Pensl, G [1 ]
机构：
[1] UNIV ERLANGEN NURNBERG,INST ANGEW PHYS,D-91058 ERLANGEN,GERMANY
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1997年 / 162卷 / 01期
关键词：
D O I：
10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Micropipes are hollow tubular defects penetrating SiC single crystals. Different mechanisms of formation and stabilization as well as energetic aspects are discussed.
引用
收藏
页码：251 / 262
页数：12
相关论文
共 50 条
  • [1] Micropipes in silicon carbide crystals
    Gutkin, Mikhail Yu.
    Sheinerman, Alexander G.
    Argunova, Tatiana S.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 8, 2009, 6 (08): : 1942 - +
  • [2] The character of micropipes in silicon carbide crystals
    Vetter, WM
    Dudley, M
    PHILOSOPHICAL MAGAZINE, 2006, 86 (09) : 1209 - 1225
  • [3] Micropipes migration mechanisms in silicon carbide
    Avrov, DD
    Bakin, AS
    Dorozhkin, SI
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 73 - 76
  • [4] Micropipes in silicon carbide: Microstructure of the wall
    Heindl, J
    Strunk, HP
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 193 (01): : K1 - K3
  • [5] Silicon carbide crystal growth eliminates micropipes
    Takahashi, J.
    III-Vs Review, 1994, 7 (02) : 42 - 43
  • [6] Structural transformation of dislocated micropipes in silicon carbide
    Gutkin, MY
    Sheinerman, AG
    Argunova, TS
    Mokhov, EN
    Je, JH
    Hwu, Y
    Tsai, WL
    SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 367 - 370
  • [7] Self-healing phenomenon of micropipes in silicon carbide
    Okamoto, A
    Seno, Y
    Sugiyama, N
    Hirose, F
    Hara, K
    Tani, T
    Nakamura, D
    Kamiya, N
    Onda, S
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 103 - 106
  • [8] Imaging of micropipes in silicon carbide under high field stress
    Gradinaru, G
    Helmi, M
    Khlebnikov, Y
    Korony, G
    Mitchel, WC
    Sudarshan, TS
    DEFECTS IN ELECTRONIC MATERIALS II, 1997, 442 : 643 - 648
  • [9] Initial stage of crystallization in the growth of silicon carbide on substrates with micropipes
    Khlebnikov, I
    Cherednichenko, D
    Khlebnikov, Y
    Sudarshan, TS
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 59 - 62
  • [10] Initial stage of crystallization in the growth of silicon carbide on substrates with micropipes
    Khlebnikov, I.
    Cherednichenko, D.
    Khlebnikov, Y.
    Sudarshan, T.S.
    Materials Science Forum, 2000, 338
12345