H+ and He+ ions used as a RBS probe of thin defective layers in silicon.: A Monte Carlo study

In this study a comparison is made between the RBS yield of H+ and He+ ions implanted under channelling conditions, with an energy in the sub-MeV range, into a defective silicon crystal. The yield Y-bs is constructed by directly simulating the paths of the ions with a Monte Carlo simulation method. The purpose of the simulations is to investigate if 'universal' relationships, similar to the ones for amorphous targets, are also possible for the highly defective ones. The results of the simulations indicate that Pbs is dictated by three factors, that is, the structure of the defects, the ion energy and its charge. The contribution of these three factors is significant and consequently an universal formulation of Y-bs has to be regarded only as a first-order approach. (C) 2000 Elsevier Science B.V. All rights reserved.