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Immediate early gene activation in hippocampus and dorsal striatum: Effects of explicit place and response training
被引:25
|作者:
Gill, Kathryn M.
[1
]
Bernstein, Ilene L.
[1
]
Mizumori, Sheri J. Y.
[1
]
机构:
[1] Univ Washington, Dept Psychol, Seattle, WA 98195 USA
关键词:
c-fos;
Zif268;
place learning;
response learning;
hippocampus;
dorsal striatum;
T-maze;
D O I:
10.1016/j.nlm.2006.12.011
中图分类号:
B84 [心理学];
C [社会科学总论];
Q98 [人类学];
学科分类号:
03 ;
0303 ;
030303 ;
04 ;
0402 ;
摘要:
Evidence from lesion, electrophysiological, and neuroimaging studies support the hypothesis that the hippocampus and dorsal striatum process afferent inputs in such a way that each structure regulates expression of different behaviors in learning and memory. The present study sought to determine whether rats explicitly trained to perform one of two different learning strategies, spatial or response, would display disparate immediate early gene activation in hippocampus and striatum. c-Fos and Zif268 immunoreactivity (IR) was measured in both hippocampus and striatum 30 or 90 min following criterial performance on a standard plus-maze task (place learners) or a modified T-maze task (response learners). Place and response learning differentially affected c-Fos-IR in striatum but not hippocampus. Specifically, explicit response learning induced greater c-Fos-IR activation in two subregions of the dorsal striatum. This increased c-Fos-IR was dependent upon the number of trials performed prior to reaching behavioral criterion and accuracy of performance during post-testing probe trials. Quantification of Zif268-IR in both hippocampus and striatum failed to distinguish between place and response learners. The changes in c-Fos-IR occurred 30 min, but not 90 min, post-testing. The synthesis of c-Fos early in testing could reflect the recruitment of key structures in learning. Consequently, animals that were able to learn the response task efficiently displayed greater amounts of c-Fos-IR, in dorsal striatum. (C) 2007 Elsevier Inc. All rights reserved.
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页码:583 / 596
页数:14
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