Optical properties of Cu3In5S9 single crystals by spectroscopic ellipsometry

被引:3
|
作者
Isik, M. [1 ]
Nasser, H. [2 ]
Ahmedova, F. [3 ]
Guseinov, A. [3 ]
Gasanly, N. M. [4 ]
机构
[1] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey
[2] Middle East Tech Univ, Ctr Solar Energy Res & Applicat GUNAM, TR-06800 Ankara, Turkey
[3] Baku State Univ, Dept Phys, Baku 1148, Azerbaijan
[4] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey
来源
OPTIK | 2018年 / 171卷
关键词
Ellipsometry; Optical properties; Semiconductors; REFRACTIVE-INDEX; PHOTOCONDUCTIVITY; GAP;
D O I
10.1016/j.ijleo.2018.06.056
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Cu3In5S9 single crystals were investigated by structural methods of x-ray diffraction and energy dispersive spectroscopy and optical techniques of ellipsometry and reflection carried out at room temperature. The spectral dependencies of optical constants; dielectric function, refractive index and extinction coefficient, were plotted in the range of 1.2-6.2 eV from ellipsometric data. The spectra of optical constants obtained from ellipsometry analyses and reflectance spectra presented a sharp change around 1.55 and 1.50 eV, respectively, which are associated with band gap energy of the crystal. The critical point (interband transition) energies were also found from the analyses of second-energy derivative of real and imaginary components of dielectric function. The analyses indicated the presence of four critical points at 2.73, 135, 4.04 and 4.98 eV.
引用
收藏
页码:77 / 82
页数:6
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