Three-dimensional unsteady modeling analysis of silicon transport in melt during Cz growth of Ge1-xSix bulk crystals

被引：16
|
作者：
Smirnova, O. V.
Kalaev, V. V.
Makarov, Yu. N.
Abrosimov, N. V.
Riemann, H.
Kurlov, V. N.
机构：
[1] STR GmbH, D-91002 Erlangen, Germany
[2] Soft Impact Ltd, St Petersburg 194156, Russia
[3] Inst Crystal Growth, D-12489 Berlin, Germany
[4] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 303卷 / 01期
关键词：
computer simulation; mass transport; Czochralski method; Ge1-xSix; Si; Ge;
D O I：
10.1016/j.jcrysgro.2006.11.150
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Si transport in the melt during Czochralski (Cz) growth of Ge1-xSix bulk crystals has been simulated within a 3D unsteady approach using two models of Si sources. The effect of the rod number on Si supply to the crystallization front is discussed. The crystallization front geometry is computed taking into account crystallization temperature varying with Si concentration. The predicted geometry is compared with experimental data. To study the effect of 3D unsteady melt motion, the results are compared with 2D axisymmetric computations of Si transport. (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：141 / 145
页数：5
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