Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates

被引：162

作者：

Wuu, DS ^{[1
]}

Wang, WK

Shih, WC

Horng, RH

Lee, CE

Lin, WY

Fang, JS

机构：

[1] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 402, Taiwan

[2] Natl Formosa Univ, Inst Electroopt & Mat Sci, Huwei 632, Taiwan

[3] Natl Chung Hsing Univ, Inst Precis Engn, Taichung 402, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 02期

关键词：

GaN; InGaN; light-emitting diode (LED); near ultraviolet (UV); patterned sapphire substrate (PSS);

D O I：

10.1109/LPT.2004.839012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Near-ultraviolet nitride-based light-emitting diodes (LEDs) with peak emission wavelengths around 410 nm were fabricated onto c-face patterned sapphire substrates (PSS). It was found that the electroluminescence intensity of the PSS LED shown 63% larger than that of the conventional LED. For a typical lamp-form PSS LED operating at a forward current of 20 mA, the output power and external quantum efficiency were estimated to be 10.4 mW and 14.1%, respectively. The improvement in the light intensity could be attributed to the decrease of threading dislocations and the increase of light extraction efficiency in the horizontal direction using a PSS.

引用

页码：288 / 290

页数：3

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