Domain size, layer number and morphology control for graphene grown by chemical vapor deposition

被引:10
|
作者
Xue, Ruiwen [1 ]
Abidi, Irfan H. [1 ]
Luo, Zhengtang [1 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Chem & Biomol Engn, Kowloon, Hong Kong, Peoples R China
关键词
Graphene; synthesis; chemical vapor deposition; domain size; SINGLE-CRYSTAL GRAPHENE; HEXAGONAL BORON-NITRIDE; CU-NI ALLOY; LARGE-AREA GRAPHENE; MONOLAYER GRAPHENE; EPITAXIAL GRAPHENE; BILAYER GRAPHENE; UNIFORM GRAPHENE; GRAIN-BOUNDARIES; ELECTRONIC-STRUCTURE;
D O I
10.1142/S1793604717300031
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Over the past a few years, high-quality graphene preparation has been evolved from low-yield micromechanical exfoliation in including a wide range of production methods, in particular by chemical vapor deposition (CVD). Here, we review the state-of-the-art on synthesis of graphene using CVD method and the strategies to control the graphene grain size, number of layers and morphology, mainly focusing on the graphene growth that uses Cu as substrate. We highlight the success of the past research in the field and provide a review of the methods that were used for such controlled synthesis.
引用
收藏
页数:21
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