High-efficiency CMOS push-pull power amplifier with multilayer center-tapped transformer

被引:1
|
作者
Nakamura, Shingo [1 ]
Kanemoto, Daisuke [2 ]
Sadakiyo, Tomoki [1 ]
Kanaya, Haruichi [2 ]
机构
[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, 744 Motooka, Fukuoka, Fukuoka 8190395, Japan
[2] Univ Yamanashi, Fac Engn, Grad Fac Interdisciplinary Res, 4-3-11 Takeda, Kofu, Yamanashi 4008510, Japan
关键词
power amplifier; push-pull; CMOS; power added efficiency; transformer; optimized impedance antenna; DESIGN;
D O I
10.1002/tee.22228
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the design of a push-pull power amplifier (PA) with a center-tapped transformer for transmitter applications on the 5.2-GHz band using 0.18m CMOS technology. The type of the proposed PA is based on a double-ended push-pull (DEPP) configuration. DEPP has a simple construction with only transistors and transformers. The PA has reverse-phased cascode-connected transistors. The proposed transformer has a multilayer structure and was designed using electromagnetic field simulation. To achieve high power added efficiency (PAE), we assumed the optimized output impedance technique with a tunable impedance antenna. The PA has 13.2 dB linearity gain, 14.9 dBm 1-dB compression point (P1dB), and 27.4% maximum PAE. (c) 2016 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.
引用
收藏
页码:384 / 386
页数:3
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