Uniformity and Retention Improvement of TaOx-Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering

被引：13
|
作者：
Gong, Tiancheng [1 ,2 ,3 ]
Luo, Qing [1 ,2 ,3 ]
Xu, Xiaoxin [1 ,2 ,3 ]
Yuan, Peng [1 ]
Ma, Haili [1 ]
Chen, Chuanbing [1 ]
Liu, Qi [1 ,2 ,3 ]
Long, Shibing [1 ,2 ,3 ]
Lv, Hangbing [1 ,2 ,3 ]
Liu, Ming [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Key Lab Microelect Device & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Jiangsu Natl Synerget Innovat Ctr Adv Mat, Nanjing 210009, Jiangsu, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 09期
基金：
中国国家自然科学基金;
关键词：
Conductive bridge random access memory (CBRAM); reliability; uniformity; low resistance state (LRS); retention; RESISTIVE SWITCHING UNIFORMITY; FILAMENT;
D O I：
10.1109/LED.2017.2734907
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Uniformity and retention are crucial aspects for application of conductive bridge random access memory. In this letter, a self-aligned CuSiN interfacial layer was inserted into Cu/TaOx/Ru device to obtain a Cu/CuSiN/TaOx/Ru structure. Compared with the Cu/TaOx/Ru device, the Cu/CuSiN/TaOx/Ru device shows much improved uniformity of resistance and programming voltage. Higher ON/OFF ratio of 1000x was observed, benefiting from the tight distribution of resistance. The standard deviation of set voltage was minimized from 0.635 to 0.187. Moreover, the low-resistance-state retention was also greatly improved. The uniformity and retention improvement could be well explained by the good controlment of cation injection and localization induced by CuSiN interfacial layer.
引用
收藏
页码：1232 / 1235
页数：4
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