Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures

被引：131

作者：

Muravjov, A. V. ^{[1
,2
]}

Veksler, D. B. ^{[1
]}

Popov, V. V. ^{[3
]}

Polischuk, O. V. ^{[3
]}

Pala, N. ^{[4
]}

Hu, X. ^{[5
]}

Gaska, R. ^{[5
]}

Saxena, H. ^{[6
]}

Peale, R. E. ^{[6
]}

Shur, M. S. ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[2] RAS, Inst Phys Microstruct, Nizhny 603950, Novgorod, Russia

[3] RAS, Kotelnikov Inst Radio Engn & Elect, Saratov 410019, Russia

[4] Florida Int Univ, Miami, FL 33174 USA

[5] Sensor Elect Technol Inc, Columbia, SC 29209 USA

[6] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 04期

关键词：

aluminium compounds; gallium compounds; high electron mobility transistors; III-V semiconductors; plasmonics; terahertz waves; wide band gap semiconductors; FIELD-EFFECT TRANSISTOR; INVERSION-LAYERS; DETECTORS; MODES;

D O I：

10.1063/1.3292019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strong plasmon resonances have been observed in the terahertz transmission spectra (1-5 THz) of large-area slit-grating-gate AlGaN/GaN-based high-electron-mobility transistor (HEMT) structures at temperatures from 10 to 170 K. The resonance frequencies correspond to the excitation of plasmons with wave vectors equal to the reciprocal lattice vectors of the metal grating, which serves both as a gate electrode for the HEMT and a coupler between plasmons and incident terahertz radiation. Wide tunability of the resonances by the applied gate voltage demonstrates potential of these devices for terahertz applications.

引用

页数：3

共 26 条

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