A 300 mV 494GOPS/W Reconfigurable Dual-Supply 4-Way SIMD Vector Processing Accelerator in 45 nm CMOS

被引:16
|
作者
Kaul, Himanshu [1 ]
Anders, Mark A. [1 ]
Mathew, Sanu K. [1 ]
Hsu, Steven K. [1 ]
Agarwal, Amit [1 ]
Krishnamurthy, Ram K. [1 ]
Borkar, Shekhar [1 ]
机构
[1] Intel Corp, Circuit Res Lab, Hillsboro, OR 97124 USA
关键词
Dual-supply; reconfigurable; single instruction multiple data (SIMD); ultra-low voltage; vector processing; MASSIVELY-PARALLEL PROCESSOR; BASEBAND PROCESSOR;
D O I
10.1109/JSSC.2009.2031813
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a reconfigurable 4-way SIMD engine fabricated in 45 nm high-k/metal-gate CMOS, targeted for on-die acceleration of vector processing in power-constrained mobile microprocessors. The SIMD accelerator is reconfigured to perform 4-way 16b x 16b multiplies, 32b x 32b multiply, 4-way 16b additions, 2-way 32b additions or 72b addition with single-cycle throughput and wide supply voltage range of operation (1.3 V-230 mV). A reconfigurable 2 x 2 tile of signed 2's complement 16b multipliers, with conditional carry gating in the 72b sparse tree adder, dual-supplies for voltage hopping, and fine-grained power-gating enables peak energy efficiency of 494GOPS/W (measured at 300 mV, 50 degrees C) with a dense layout occupying 0.081 mm(2) while achieving: (i) scalable performance up to 2.8 GHz, 278 mW measured at 1.3 V; (ii) fast single-cycle switching between any operating/idle mode; (iii) configuration-dependent power reduction of up to 41% in total power and 6.5 x in active leakage power; (iv) 10 x standby leakage reduction during idle mode; (v) deep subthreshold operation measured at 230 mV, 8.8 MHz, 87 mu W; and (vi) compensation for up to 3 x performance variation in ultra-low voltage mode.
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页码:95 / 102
页数:8
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