A Six Level Gate-Driver Topology with 2.5 ns Resolution for Silicon Carbide MOSFET Active Gate Drive Development

被引：5

作者：

Judge, Paul D. ^{[1
]}

Mathieson, Ross ^{[1
]}

Finney, Stephen ^{[1
]}

机构：

[1] Univ Edinburgh, Sch Engn, Inst Energy Syst, Edinburgh, Midlothian, Scotland

来源：

2021 IEEE 12TH ENERGY CONVERSION CONGRESS AND EXPOSITION - ASIA (ECCE ASIA) | 2021年

基金：

英国工程与自然科学研究理事会;

关键词：

SIC MOSFET;

D O I：

10.1109/ECCE-Asia49820.2021.9479081

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

This paper presents a new high-bandwidth multilevel gate-drive topology for use in Silicon Carbide (SiC) Active Gate-Driver Development. The presented Modular Multilevel gate Driver (MMGD) is a voltage modulated gate-driver topology that has a resolution of 2.5 ns and a current source/sink ability of approximately 5A, allowing for driving of high-power SiC MOSFETS. The MMGD is formed of off-the-shelf components, and so is readily reproducible. The speed of the gate-driver has been found to be fast enough to effectively PWM the gate of a high-power SiC MOSFET, allowing mutliple gate-driving strategies to be investigated. Experimental results using a 1.7 kV 300 A SiC MOSFET are given to validate the MMGDs ability to actively influence the switching behaviour of a high-power device.

引用

页码：2133 / 2138

页数：6

共 24 条

[11] A High Temperature Silicon Carbide MOSFET Power Module with Integrated Silicon-on-Insulator Based Gate Drive
Wang, Zhiqiang
Shi, Xiaojie
Tolbert, Leon M.
Wang, Fred
Liang, Zhenxian
Costinett, Daniel
Blalock, Benjamin J.
2014 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2014, : 4373 - 4380
[12] A Multi-Level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm
Zhu, Yaodong
Huang, Yongsheng
Wu, Haifu
Din, Zakiud
Zhang, Jianzhong
IEEE ACCESS, 2021, 9 : 100185 - 100196
[13] Digitally Controlled Active Gate Driver for SiC MOSFET based Induction Motor Drive switching at 100 kHz
Sukhatme, Yash
Titus, Jose
Nayak, Parthasarathy
Hatua, Kamalesh
2017 IEEE TRANSPORTATION ELECTRIFICATION CONFERENCE (ITEC-INDIA), 2017,
[14] Active Dual Level Gate Driver for Dead Time and Switching Losses Reduction in Drive Systems
Mandelli, E.
Mariconti, A.
Ruzza, S.
Baschirotto, A.
PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020), 2020, : 258 - 261
[15] Universal Active Gate Driver IC With Closed-Loop Timing Control and Gate-Sensing Technique for Silicon Carbide Power Devices
Kuo, Chia-Wei
Wang, Ting-Wei
Chen, Ling-Chia
Tu, Chang-Ching
Hsiao, Yi-Kai
Chen, Po-Hung
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2025, 40 (04) : 5120 - 5129
[16] An Intelligent Versatile Model-Based Trajectory-Optimized Active Gate Driver for Silicon Carbide Devices
Zhao, Shuang
Zhao, Xingchen
Dearien, Audrey
Wu, Yuheng
Zhao, Yue
Mantooth, H. Alan
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2020, 8 (01) : 429 - 441
[17] Real-Time Junction Temperature Sensing for Silicon Carbide MOSFET With Different Gate Drive Topologies and Different Operating Conditions
Niu, He
Lorenz, Robert D.
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 33 (04) : 3424 - 3440
[18] A Low Level-Clamped Active Gate Driver for Crosstalk Suppression of SiC MOSFET Based on dv/dt Detection
Li, Hong
Qiu, Zhidong
Shao, Tiancong
Zeng, Yangbin
Du, Haitao
Yin, Chengdong
2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2021, : 5348 - 5353
[19] Investigation into active-gate-driving performance and potential closed-loop controller implementations for silicon carbide MOSFET modules
Sahin, Ilker
Parker, Mason
Mathieson, Ross
Finney, Stephen
Judge, Paul D.
IET POWER ELECTRONICS, 2024, 17 (12) : 1540 - 1551
[20] Closed-Loop Gate-Sensing Active Driver IC with Adaptive Delay Compensation Technique for Silicon Carbide Power MOSFETs
Kuo, Chia-Wei
Wang, Ting-Wei
Kuo, Hao-Chung
Tu, Chang-Ching
Chen, Po-Hung
2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024, 2024, : 462 - 465

← 1 2 3 →