Ballistic electron microscopy of a metal molecule interface

被引：0

作者：

Kunardi, Linda ^{[1
]}

Yi, Zheng ^{[2
]}

Troadec, Cedric ^{[1
]}

Lwin, Ma Han Thu ^{[1
]}

Knoll, Wolfgang ^{[1
]}

Chandrasekhar, N. ^{[1
,2
]}

机构：

[1] Inst Mat Res & Engn, 3 Res Link, Singapore 117602, Singapore

[2] Natl Univ Singapore, Dept Phys, Singapore 117548, Singapore

来源：

2006 IEEE CONFERENCE ON EMERGING TECHNOLOGIES - NANOELECTRONICS | 2006年

关键词：

D O I：

10.1109/NANOEL.2006.1609710

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present studies on a Ag/ HS-(CH2)(4)-T-3-H (T3C4SH)/ Au diode using nanometer scale resolution, ballistic electron emission microscopy (BEEM). Images show spatially non-uniform carrier injection. A WKB calculation is carried out and compared with the experimental data. The results indicate that molecular levels are being accessed in the BEEM experiment, since the measured currents are larger than purely tunneling contribution. Our results are consistent with previously published results on a similar molecule [1]. Physical origins of the non-uniform carrier injection and its implications are discussed.

引用

页码：194 / +

页数：2

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