A novel translinear principle based BiMOS transconductor

被引：0
|
作者：
Kiran, SP [1 ]
Rao, KR [1 ]
机构：
[1] Texas Instruments Inc, Bangalore, Karnataka, India
来源：
ELEVENTH INTERNATIONAL CONFERENCE ON VLSI DESIGN, PROCEEDINGS | 1997年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A transconductor that exploits the square law relation of the FET in conjunction with the translinear relation for the Bipolar transistors is proposed. Linear output is achieved by taking the square root of the drain current. Simulation results of the transconductor are given.
引用
收藏
页码：161 / 166
页数：6
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