Design and characterization of a p+/n-well SPAD array in 150nm CMOS process (vol 25, pg 12765, 2017)

被引：0
|
作者：
Xu, Hesong [1 ,2 ]
Pancheri, Lucio [2 ]
Dalla Betta, Gian-Franco [2 ]
Stoppa, David [1 ,2 ]
机构：
[1] Fdn Bruno Kessler, Div Integrated Radiat & Image Sensors, Via Sommarive 18, I-38123 Trento, Italy
[2] Univ Trento, Dept Ind Engn, Via Sommar 9, I-38123 Trento, Italy
来源：
OPTICS EXPRESS | 2017年 / 25卷 / 16期
关键词：
D O I：
10.1364/OE.25.019083
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：19083 / 19083
页数：1
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