200 eV 10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study

被引：17

作者：

Current, MI ^{[1
]}

Lopes, D

Foad, MA

England, JG

Jones, C

Su, D

机构：

[1] Appl Mat Inc, Santa Clara, CA 95054 USA

[2] Appl Mat Inc, Horsham, W Sussex, England

[3] Philips Mat Anal Grp, Sunnyvale, CA USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 01期

关键词：

D O I：

10.1116/1.589805

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Atomic profiles (secondary ion mass spectroscopy) and cross-section transmission electron microscopy (TEM) images of selectively etched, annealed profiles were studied for boron energies from 200 eV to 10 keV and rapid thermal processing anneals at 900, 975, and 1050 degrees C. Consistent variations of dopant depth were obtained over this process range. TEM images showed evidence of lateral dopant variation near the edges of poly-Si gate structures, perhaps an effect of lateral straggling and reflection of ions from the polymask. (C) 1998 American Vacuum Society.

引用

页码：327 / 333

页数：7

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