Photoluminescence characteristics of high quality ZnO nanowires and its enhancement by polymer covering

被引：141
|
作者：
Liu, K. W. [1 ]
Chen, R. [1 ]
Xing, G. Z. [1 ]
Wu, T. [1 ]
Sun, H. D. [1 ]
机构：
[1] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 02期
关键词：
band structure; electron-hole recombination; excitons; II-VI semiconductors; nanowires; photoluminescence; polymers; surface states; wide band gap semiconductors; zinc compounds; OPTICAL-PROPERTIES; SAPPHIRE; FILMS;
D O I：
10.1063/1.3291106
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the photoluminescence (PL) properties of ZnO nanowires with and without covering with polymethyl methacrylate (PMMA). Low temperature PL spectra of as-grown ZnO nanowires are dominated by near band edge (NBE) emission due to donor bound excitons and free-to-bound recombination (FB). FB emission persists till 300 K and together with free exciton emission governs the lineshape of the PL spectra. After covering with PMMA, the integral intensity of NBE emission increases about three times, indicating significantly improved excitonic emission efficiency. A model based on surface states and energy bands theory was proposed to interpret this emission enhancement.
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页数：3
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