A review of recent advances in semiconductor laser based gas monitors

被引:483
|
作者
Werle, P [1 ]
机构
[1] Fraunhofer Inst Atmosphar Umweltforsch, D-82467 Garmisch Partenkirchen, Germany
关键词
semiconductor laser based gas monitors; tunable diode lasers; laser absorption spectroscopy;
D O I
10.1016/S1386-1425(97)00227-8
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
When first tunable diode lasers were developed in the mid-1960s they found immediate application as much needed tunable sources for high-resolution laser absorption spectroscopy commonly referred to as TDLAS (tunable diode laser absorption spectroscopy). Substantial improvements in sensitivity and detection speed have been achieved since then and an increasing number of laser based gas monitoring applications has been reported. Diode lasers in general continue to find application to research areas requiring very high resolution, accuracy and sensitivity. In this article the main features and applications of tunable diode laser absorption spectroscopy will be reviewed. The main characteristics of the currently available semiconductor diode lasers with respect to spectroscopic applications and sensitive detection techniques will be discussed. The focus will be on high frequency modulation schemes, which have been developed and utilized for a series of gas monitoring applications in the past. Recent approaches in sample modulation enhanced high frequency modulation spectroscopy developed to cope with limitations caused by signal instability will be addressed together with the future perspectives of TDLAS. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:197 / 236
页数:40
相关论文
共 50 条
  • [1] Infrared Semiconductor laser based trace gas sensor Technologies: Recent Advances and Applications
    Tittel, Frank K.
    Curl, Robert F.
    Dong, Lei
    Lewicki, Rafal
    [J]. OPTICAL SENSORS 2011 AND PHOTONIC CRYSTAL FIBERS V, 2011, 8073
  • [2] Semiconductor laser based trace gas sensor technology. Recent advances and applications
    Tittel, Frank K.
    Wysocki, Gerard
    Kosterev, Anatoliy
    Bakhirkin, Yury
    [J]. MID-INFRARED COHERENT SOURCES AND APPLICATIONS, 2008, : 467 - 493
  • [3] Recent Advances in Infrared Semiconductor Laser based Chemical Sensing Technologies
    Tittel, F. K.
    Curl, R. F.
    Dong, L.
    Doty, J. H.
    Kosterev, A. A.
    Lewicki, R.
    Thomazy, D.
    Wysocki, G.
    [J]. TERAHERTZ AND MID INFRARED RADIATION: GENERATION, DETECTION AND APPLICATIONS, 2011, : 165 - +
  • [4] Recent advances in ethanol gas sensors based on metal oxide semiconductor heterojunctions
    Ling-Yun Gai
    Run-Ping Lai
    Xian-Hui Dong
    Xing Wu
    Qiao-Tong Luan
    Jue Wang
    Hao-Feng Lin
    Wen-Hao Ding
    Guang-Lei Wu
    Wan-Feng Xie
    [J]. Rare Metals, 2022, 41 (06) : 1818 - 1842
  • [5] Recent advances in ethanol gas sensors based on metal oxide semiconductor heterojunctions
    Gai, Ling-Yun
    Lai, Run-Ping
    Dong, Xian-Hui
    Wu, Xing
    Luan, Qiao-Tong
    Wang, Jue
    Lin, Hao-Feng
    Ding, Wen-Hao
    Wu, Guang-Lei
    Xie, Wan-Feng
    [J]. RARE METALS, 2022, 41 (06) : 1818 - 1842
  • [6] Recent advances in ethanol gas sensors based on metal oxide semiconductor heterojunctions
    Ling-Yun Gai
    Run-Ping Lai
    Xian-Hui Dong
    Xing Wu
    Qiao-Tong Luan
    Jue Wang
    Hao-Feng Lin
    Wen-Hao Ding
    Guang-Lei Wu
    Wan-Feng Xie
    [J]. Rare Metals, 2022, 41 : 1818 - 1842
  • [7] Recent advances in THz detectors based on semiconductor structures with quantum confinement: a review
    Yachmenev, A. E.
    Khabibullin, R. A.
    Ponomarev, D. S.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 55 (19)
  • [8] Metal oxide semiconductor-based Schottky diodes: a review of recent advances
    Al-Ahmadi, Noorah A.
    [J]. MATERIALS RESEARCH EXPRESS, 2020, 7 (03)
  • [9] RECENT ADVANCES IN CIRCULATORY MONITORS FOR THE SKIN
    JONES, BM
    [J]. JOURNAL OF INTERNATIONAL BIOMEDICAL INFORMATION AND DATA-IBID, 1983, 4 (02): : 39 - 48
  • [10] A REVIEW OF RECENT ADVANCES IN SEMICONDUCTOR SUPER-LATTICES
    CHANG, LL
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 120 - 125