Electrical characteristics of UV photodetectors based on ZnO/diamond film structure

被引：29
|
作者：
Liu, Jianmin [1 ]
Xia, Yiben [1 ]
Wang, Linjun [1 ]
Su, Qingfeng [1 ]
Shi, Weimin [1 ]
机构：
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 12期
基金：
中国国家自然科学基金;
关键词：
photodetector; ZnO/diamond film structure; ohmic contact; grain size; photoresponse;
D O I：
10.1016/j.apsusc.2006.11.043
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ultraviolet photodetectors based on ZnO/diamond film structure were fabricated. The properties of Au/ZnO contacts and effects of grain sizes on the electrical characteristics of photodetectors were discussed. Due to the bombardment with Au atoms and the annealing process, fine ohmic contacts were formed between Au electrodes and ZnO films. Dark currents and photocurrents of the photodetectors were related to sputtering time and the grain size of ZnO films. For the photodetector with a bigger grain size, a lower dark current and a higher photocurrent were obtained under 10 V bias voltage. The time-dependent photocurrent confirmed the carrier trapping effect. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：5218 / 5222
页数：5
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