Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements

被引:21
|
作者
Callsen, G. [1 ]
Wagner, M. R. [1 ]
Reparaz, J. S. [1 ]
Nippert, F. [1 ]
Kure, T. [1 ]
Kalinowski, S. [1 ]
Hoffmann, A. [1 ]
Ford, M. J. [2 ]
Phillips, M. R. [2 ]
Dalmau, R. F. [3 ]
Schlesser, R. [3 ]
Collazo, R. [4 ]
Sitar, Z. [4 ]
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Univ Technol Sydney, Dept Phys & Adv Mat, Sydney, NSW 2007, Australia
[3] HexaTech Inc, Morrisville, NC 27560 USA
[4] N Carolina State Univ, Raleigh, NC 27695 USA
基金
美国国家科学基金会;
关键词
SEEDED GROWTH; BULK ALN; GAN; SCATTERING; STRAIN; MODE; CRYSTALS;
D O I
10.1103/PhysRevB.90.205206
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We studied bulk crystals of wurtzite AlN by means of uniaxial pressure-dependent Raman measurements. As a result, we derive the phonon pressure coefficients and deformation potentials for all zone center optical phonon modes. For the A(1) and E-1 modes, we further experimentally determined the uniaxial pressure dependence of their longitudinal optical-transverse optical (LO-TO) splittings. Our experimental approach delivers new insight into the large variance among previously reported phonon deformation potentials, which are predominantly based on heteroepitaxial growth of AlN and the ball-on-ring technique. Additionally, the measured phonon pressure coefficients are compared to their theoretical counterparts obtained by density functional theory implemented in the SIESTA package. Generally, we observe a good agreement between the calculated and measured phonon pressure coefficients but some particular Raman modes exhibit significant discrepancies similar to the case of wurtzite GaN and ZnO, clearly motivating the presented uniaxial pressure-dependent Raman measurements on bulk AlN crystals.
引用
收藏
页数:9
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