The removal of nanoparticles from sub-micron trenches using megasonics

被引：12

作者：

Karimi, Pegah ^{[1
]}

Kim, Taehoon ^{[1
]}

Aceros, Juan ^{[1
]}

Park, Jingoo ^{[2
]}

Busnaina, Ahmed A. ^{[1
]}

机构：

[1] Northeastern Univ, Boston, MA 02115 USA

[2] Hanyang Univ, Ansan 426791, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 09期

基金：

美国国家科学基金会;

关键词：

Megasonic cleaning; Trench cleaning using megasonic; Nanoparticle removal using megasonic; Effect of power on particle removal from trenches; Effect of time on particle removal from trenches; Nanoparticle removal from trenches; RECTANGULAR CAVITIES; TRANSPORT; FLOW;

D O I：

10.1016/j.mee.2009.11.052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The removal of nanoparticles form patterned wafers is one of the main challenges facing the semiconductor industry. In this paper, the removal of 100 and 200 nm polystyrene latex (PSL) particles from silicon trenches was investigated. Red fluorescent PSL particles were utilized in the cleaning experiments and were counted using fluorescent microscopy. All the experiments were conducted in a single wafer megasonic tank using deionized water (DI). Trenches were fabricated with widths varying from 200 nm to 2 pm and with an aspect ratio of one. Results show that removal of particles from larger trenches is faster compared to smaller trenches and that megasonics power is more important in the removal process than cleaning time. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1665 / 1668

页数：4

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