Study of thin Ge films with amorphous and nanocrystalline phases via the techniques of EXAFS spectroscopy and AFM

被引：0
|
作者：
Valeev, R. G. [1 ,2 ]
Deev, A. N. [1 ]
Surnin, D. V. [1 ]
Kriventsov, V. V. [3 ]
Karban', O. V. [1 ]
Vetoshkin, V. M. [1 ,2 ]
Pivovarova, O. I. [1 ]
机构：
[1] Russian Acad Sci, Ural Branch, Phys Tech Inst, Izhevsk, Russia
[2] Udmurt State Univ, Izhevsk, Russia
[3] Russian Acad Sci, Siberian Branch, Boreskov Inst Catalysis, Novosibirsk, Russia
来源：
JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES | 2010年 / 4卷 / 01期
基金：
俄罗斯基础研究基金会;
关键词：
Atomic Force Microscopy Image; Surface Investigation; Neutron Technique; Pair Correlation Function; Ultrahigh Vacuum;
D O I：
10.1134/S1027451010010209
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The local atomic structure and surface morphology of thin semiconductor films of Ge have been studied via extended X-ray absorption fine structure spectroscopy and atomic force microscopy. The films have been obtained by thermal evaporation of a material in an ultrahigh vacuum at different substrate temperatures. The films contain both amorphous and nanocrystalline phases. The percentage of the phases depends on the condensation temperature. The classical linear dependence of grain sizes on condensation temperature T is violated at T=100A degrees C.
引用
收藏
页码：136 / 141
页数：6
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