Study on properties of AgSnO2 contact materials doped with rare earth Y

SnO2 in the AgSnO2 contact material is a kind of high hardness and almost insulated wide bandgap semiconductor material. In the process of use, the contact resistance is large and the temperature raise is great, so that the contact reliability is reduced and the electrical life is shortened. In order to improve the comprehensive performance ofAgSnO(2) contact materials, based on the first principle of density functional theory, the electrical and mechanical properties of Y with different ratios doped SnO2 contact materials are calculated. Through the analysis of energy band, density of state and elastic constant, the results show that when the doping ratio of Y is 0.167, the conductivity is the best; the hardness decreases, and the universal elastic anisotropy index is the smallest. Finally, in the experiment, SnO2 powders with different doping ratios are prepared by sol-gel method, AgSnO2 contacts with different doping proportions are prepared by powder metallurgy, and arc energy, contact resistance, density and hardness are measured. and the final simulation and experimental results are well matched.