How spectroscopic ellipsometry can aid graphene technology?

被引:13
|
作者
Losurdo, Maria [1 ]
Giangregorio, Maria M. [1 ]
Bianco, Giuseppe V. [1 ]
Capezzuto, Pio [1 ]
Bruno, Giovanni [1 ]
机构
[1] Univ Bari, CNR IMIP, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy
关键词
Graphene; Ellipsometry; CVD; GRAIN-BOUNDARIES; GROWTH; TOOL;
D O I
10.1016/j.tsf.2014.03.057
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We explore the effects of substrate, grain size, oxidation and cleaning on the optical properties of chemical vapor deposited polycrystalline monolayer graphene exploiting spectroscopic ellipsometry in the NIR-Vis-UV range. Both Drude-Lorentz oscillators' and point-by-point fit approaches are used to analyze the ellipsometric spectra. For monolayer graphene, since anisotropy cannot be resolved, an isotropic model is used. A prominent absorption peak at approximately 4.8 eV, which is a mixture of pi-pi* interband transitions at the M-point of the Brillouin zone and of the pi-plasmonic excitation, is observed. We discuss the sensitivity of this peak to the structural and cleaning quality of graphene. The comparison with previous published dielectric function spectra of graphene is discussed giving a rationale for the observed differences. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:389 / 394
页数:6
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