Large cyclotron-resonance line splitting of two-dimensional electrons in AlGaN/GaN and AlGaAs/GaAs heterostructures

被引：2

作者：

Syed, S ^{[1
]}

Wang, YJ

Stormer, HL

Manfra, MJ

Pfeiffer, LN

West, KW

Molnar, R

机构：

[1] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA

[2] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32306 USA

[3] Columbia Univ, Dept Phys, Murray Hill, NJ 07974 USA

[4] Bell Labs, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2004年 / 18卷 / 27-29期

关键词：

GaN; cyclotron resonance; two-dimensional electrons;

D O I：

10.1142/S0217979204027426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Large cyclotron-resonance (CR) line splittings have been observed previously in two-dimensional (2D) electrons in AlGaN/GaN and in GaAs/AlGaAs heterojunctions. The features resemble a level anti-crossing and imply a strong interaction with an unknown excitation of the solid. The origin of this phenomenon remains unexplained. This paper reviews the existing data and presents some recently detected correlations of the splitting with other sample parameters.

引用

页码：3761 / 3768

页数：8

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