Processes of the Reliability and Degradation Mechanism of High-Power Semiconductor Lasers

被引:15
|
作者
Song, Yue [1 ,2 ]
Lv, Zhiyong [3 ]
Bai, Jiaming [4 ]
Niu, Shen [1 ,2 ]
Wu, Zibo [5 ]
Qin, Li [1 ,2 ]
Chen, Yongyi [1 ,2 ,6 ]
Liang, Lei [1 ,2 ]
Lei, Yuxin [1 ,2 ]
Jia, Peng [1 ,2 ]
Shan, Xiaonan [1 ,2 ]
Wang, Lijun [1 ,2 ,7 ,8 ]
机构
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
[2] Univ Chinese Acad Sci, Daheng Coll, Beijing 100049, Peoples R China
[3] Zhengzhou Univ, Sch Phys & Microelect, Zhengzhou 450001, Peoples R China
[4] Jilin Univ, Sch Phys, Changchun 130015, Peoples R China
[5] Changchun Coll Elect Technol, Sch Optoelect Informat Sci & Engn, Changchun 130061, Peoples R China
[6] Jlight Semicond Technol Co Ltd, Changchun 130102, Peoples R China
[7] Peng Cheng Lab, 2 Xingke 1st St, Shenzhen 518000, Peoples R China
[8] Hainan Normal Univ, Sch Phys & Elect Engn, Key Lab Laser Technol & Optoelect Funct Mat Haina, Academician Team Innovat Ctr Hainan Prov, Haikou 570206, Hainan, Peoples R China
基金
中国国家自然科学基金;
关键词
high-power semiconductor laser; failure mechanisms; accelerated aging test; failure analysis techniques; LEVEL TRANSIENT SPECTROSCOPY; BEAM-INDUCED CURRENT; ARRHENIUS; DEFECTS; DAMAGE; DIODES; ELECTROMIGRATION; STABILITY; FAILURES; DEVICES;
D O I
10.3390/cryst12060765
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
High-power semiconductor lasers have attracted widespread attention because of their small size, easy modulation, and high conversion efficiency. They play an important role in national economic construction and national defense construction, including free-space communication; industrial processing; and the medical, aerospace, and military fields, as well as other fields. The reliability of high-power semiconductor lasers is the key point of the application system. Higher reliability is sought in the military defense and aerospace fields in particular. Reliability testing and failure analysis help to improve the performance of high-power semiconductor lasers. This article provides a basis for understanding the reliability issues of semiconductor lasers across the whole supply chain. Firstly, it explains the failure modes and causes of failure in high-power semiconductor lasers; this article also summarizes the principles and application status of accelerated aging experiments and lifetime evaluation; it also introduces common techniques used for high-power semiconductor laser failure analysis, such as the electron beam-induced current (EBIC) technique and the optical beam-induced current (OBIC) technique, etc. Finally, methods used to improve the reliability of high-power semiconductor lasers are proposed in terms of the preparation process, reliability screening, and method application.
引用
收藏
页数:26
相关论文
共 50 条
  • [1] Degradation of high-power semiconductor quantum-well lasers
    Koval, O. I.
    Rzhanov, A. G.
    Solovyev, G. A.
    PHYSICS OF WAVE PHENOMENA, 2013, 21 (04) : 287 - 290
  • [2] Degradation of high-power semiconductor quantum-well lasers
    O. I. Koval’
    A. G. Rzhanov
    G. A. Solovyev
    Physics of Wave Phenomena, 2013, 21 : 287 - 290
  • [3] Microscopic degradation and failure processes in high-power diode lasers
    Souto, J.
    Pura, J. L.
    Jimenez, J.
    PROCEEDINGS OF THE 2019 IEEE HIGH POWER DIODE LASERS AND SYSTEMS CONFERENCE (HPD), 2019, : 13 - 14
  • [4] High-power, high brightness semiconductor lasers
    Botez, D
    SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES, 2005, 5624 : 203 - 212
  • [5] A brief history of high-power semiconductor lasers
    Welch, DF
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2000, 6 (06) : 1470 - 1477
  • [6] High-power semiconductor lasers: Applications and progress
    Latham, WP
    Cooley, WT
    Vansuch, GJ
    Salvi, TC
    ADVANCED HIGH-POWER LASERS, 2000, 3889 : 34 - 44
  • [7] Physical aspects of high-power semiconductor lasers
    Gonda, S
    Miyajima, H
    Kan, H
    COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS, 2005, 184 : 89 - 94
  • [8] High-power indium phosphide semiconductor lasers
    Mathur, A
    LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2, 2000, : 506 - 507
  • [9] High-Power Semiconductor Lasers: Applications and progress
    Latham, WP
    Cooley, WT
    Vansuch, GJ
    Salvi, TC
    ICALEO (R)'99: PROCEEDING OF THE LASER MATERIALS PROCESSING CONFERENCE, VOL 87, PTS 1 AND 2, 2000, 87 : A1 - A11
  • [10] Outlook bright for high-power semiconductor lasers
    Hamada, Ken
    Shimizu, Hirokazu
    JEE. Journal of electronic engineering, 1988, 25 (260): : 41 - 43