Numerical simulation of vacuum-ultraviolet irradiation of dielectric layers

被引：12
|
作者：
Sinha, H. [1 ,2 ]
Ren, H. [1 ,2 ]
Sehgal, A. [1 ,2 ]
Antonelli, G. A. [3 ]
Nishi, Y. [4 ]
Shohet, J. L. [1 ,2 ]
机构：
[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA
[2] Univ Wisconsin, Plasma Proc Technol Lab, Madison, WI 53706 USA
[3] Novellus Syst, Tualatin, OR 97062 USA
[4] Stanford Univ, Stanford, CA 94305 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 14期
关键词：
dielectric thin films; electrostatics; Monte Carlo methods; photoconductivity; Poisson equation; surface potential; ultraviolet radiation effects; DAMAGE; SCATTERING; RADIATION;
D O I：
10.1063/1.3386531
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Vacuum-ultraviolet irradiation produces trapped charges in dielectrics. The trapped charges often generate self-consistent electric fields. A Monte Carlo simulation coupled with a Poisson equation solver is used to model the relationship between the irradiation photon flux and electrostatic potential. The simulation includes photoconduction, photoemission, photoinjection, and the effects of self-consistent electric fields. Calculations show that photoemission and photoinjection are responsible for changes in the electric potential as photon dose or dielectric thicknesses are varied. Experimental surface-potential measurements were made to compare the results of the simulation.
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页数：3
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