Effect of neutron bombardment on the electrical characteristics of n-GaAs

Au/n-GaAs junctions prepared on GaAs wafers bombarded by neutrons before the Schottky metallization, have been studied by DLTS, current-voltage and capacitance-voltage measurements. The changes of the electrical behaviour have indicated that the bombardment yielded: i) a band of deep levels, ii) a shift of the Fermi-level pinning position, iii) an increase of the interface state density and the measure of the lateral inhomogeneity of the barrier height, and iv) a reduction of the effective doping level in the vicinity of the GaAs surface.