Determination of the photorefractive parameters of Bi12SiO20 by study of the dynamic behavior of complementary gratings

被引:9
|
作者
Boutsikaris, L [1 ]
Mailis, S [1 ]
Vainos, NA [1 ]
机构
[1] Fdn Res & Technol Hellas, Inst Elect Struct & Laser, Div Laser & Applicat, Iraklion 71110, Greece
关键词
D O I
10.1364/JOSAB.15.001042
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The dynamic behavior of the complementary space-charge gratings formed in a Bi(12)SiO(20) crystal through prolonged recording at 780 nm is used to determine a number of significant photorefractive parameters, including effective trap density, diffusion length, and dielectric relaxation time, simultaneously for both types of charge carriers. This simple, all-optical method does not require prior knowledge of any other photorefractive parameters and therefore represents the only procedure currently available capable of direct materials evaluation in the low-coupling regime. Furthermore, the scheme provides the means for quantitatively assessing the effects of crystal sensitization resulting, for example, from uniform preillumination. (C) 1998 Optical Society of America.
引用
收藏
页码:1042 / 1051
页数:10
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