Preparation of Al doped PZT thin films using a sol-gel method

被引：0

作者：

Iijima, T ^{[1
]}

Sanada, N ^{[1
]}

Hiyama, K ^{[1
]}

Tsuboi, H ^{[1
]}

Okada, M ^{[1
]}

机构：

[1] AIST, MITI, Tohoku Natl Ind Res Lab, Miyagino Ku, Sendai, Miyagi 9838551, Japan

来源：

FERROELECTRIC THIN FILMS VIII | 2000年 / 596卷

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D O I：

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中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Al substitution fur Zr/Ti site of PZT was attempted using a sol-gel method, and the ferroelectric properties of 200nm-thick Al doped PZT thin films were compared with those of non- doped PZT film. The leakage current of the thin films decreased with increasing Al content. Ps and Pr also decreased with increasing Al content, whereas Ec did not show a significant change. Furthermore, a simple capacitor cell structure like FeRAM was prepared using a seed layer process. The capacitor structure was Pb(Ti0.975Al0.025)O-3/ Pb-1.1((Zr0.52Ti0.48)(0.975)Al-0.025)O-3/Pb(Ti0.975Al0.025)O-3, and 2Pr was 26 muC/cm(2). The fatigue properties of the Al doped PZT capacitor cell showed a little improvement, because the reduction rate of the fatigue was smaller than that of non-doped PZT thin film.

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页码：223 / 228

页数：6

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