Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure

被引：1

作者：

Yang, WL ^{[1
]}

Lin, CJ

Chao, TS

Liu, DG

Lei, TF

机构：

[1] Feng Chia Univ, Grad Inst, Taichung 40724, Taiwan

[2] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan

[3] Natl Nano Device Labs, Hsinchu, Taiwan

[4] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan

[5] Natl Chiao Tung Univ, Dept Elect, Hsinchu 30039, Taiwan

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 13期

关键词：

MOS integrated circuits; plasma;

D O I：

10.1049/el:19970706

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method is introduced for suppressing the penetration of boron for BF2+-implanted pMOS devices with a stacked amorphous/ poly-Si (SAP) gate structure. It is shown that after inductive-coupling-nitrogen-plasma (ICNP) treatment, boron diffusion through the thin gale oxide is largely suppressed. As shown from the charge-to-breakdown measurements, the ICNP process will improve the quality of pMOS devices, with Q(bd) three times higher than for the control samples.

引用

页码：1139 / 1140

页数：2

共 31 条

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Chao, TS
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APPLIED PHYSICS LETTERS, 1997, 70 (01) : 55 - 56
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (02) : 303 - 310
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IEEE ELECTRON DEVICE LETTERS, 1994, 15 (05) : 160 - 162
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ELECTRONICS LETTERS, 1998, 34 (01) : 128 - 129
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