An overview of cree silicon carbide power devices

被引：39
|
作者：
Richmond, J
Ryu, SH
Das, M
Krishnaswami, S
机构：
来源：
POWER ELECTRONICS IN TRANSPORTATION | 2004年
关键词：
D O I：
10.1109/PET.2004.1393789
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The compelling system benefits of using Silicon Carbide (SiC) Schottky diodes have resulted in rapid commercial adoption of this new technology by the power supply industry. Silicon Carbide PiN diodes, MOSFET's, and BJT's, are approaching the point of development that they could be transitioned to volume production. This paper reviews the characteristics of recently produced SiC devices including Schottky diodes, PiN diodes, MOSFET's, and BJT's. A comparison of the static and dynamic performance of the SiC devices and typical silicon devices is performed. The results show the performance improvement available with SiC devices. The high temperature performance capabilities of SiC devices are also highlighted.
引用
收藏
页码：37 / 42
页数：6
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