Drift-diffusion-based modeling of the non-quasistatic small-signal response for RF-MOSFET applications

被引：0

作者：

Ueno, H ^{[1
]}

Jinbou, S ^{[1
]}

Kawano, H ^{[1
]}

Morikawa, K ^{[1
]}

Nakayama, N ^{[1
]}

Miura-Mattausch, M ^{[1
]}

Mattausch, HJ ^{[1
]}

机构：

[1] Hiroshima Univ, Grad Sch Adv Sci Matter, Higashihiroshima 7398526, Japan

来源：

SISPAD 2002: INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A non-quasistatic MOSFET model for the small-signal response is developed by including the continuity equation in an analytical way. This model developed basing on the drift-diffusion approximation enables to predict the high-frequency response for any bias conditions. Our result shows that the quasistatic approximation calculates the response approximately correct up to f(T)/2, which is much higher than f(T)/10 previously estimated.

引用

页码：71 / 74

页数：4

共 24 条

[1] Drift-diffusion-based modeling of the non-quasistatic small-signal response for RF-MOSFET applications
2002, IEEE Electron Devices Society; Japan Society of Applied Physics (Institute of Electrical and Electronics Engineers Inc., United States):
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