Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth

被引：39

作者：

Inatomi, Yuya ^{[1
]}

Kangawa, Yoshihiro ^{[1
,2
,3
]}

Ito, Tomonori ^{[4
]}

Suski, Tadeusz ^{[5
]}

Kumagai, Yoshinao ^{[6
]}

Kakimoto, Koichi ^{[1
,2
]}

Koukitu, Akinori ^{[6
]}

机构：

[1] Kyushu Univ, Dept Aeronaut & Astronaut, Fukuoka 8190395, Japan

[2] Kyushu Univ, RIAM, Fukuoka 8168580, Japan

[3] Nagoya Univ, Inst Mat & Syst Sustainabil IMaSS, Nagoya, Aichi 4648601, Japan

[4] Mie Univ, Dept Phys Engn, Tsu, Mie 5148507, Japan

[5] Polish Acad Sci, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland

[6] Tokyo Univ Agr & Technol, Dept Appl Chem, Koganei, Tokyo 1848588, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 07期

关键词：

INXGA1-XN; GAN; SEMICONDUCTORS; INN;

D O I：

10.7567/JJAP.56.078003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The composition pulling effect in metalorganic vapor-phase InGaN epitaxy was theoretically investigated by thermodynamic analysis. The excess energies of biaxial-strained InxGa1-xN were numerically calculated using empirical interatomic potentials considering different situations: (i) coherent growth on GaN(0001), (ii) coherent growth on In0.2Ga0.8N(0001), and (iii) bulk growth. Using the excess energies, the excess chemical potentials of InN and GaN alloys were computed. Our results show that compressive strain suppresses In incorporation, whereas tensile strain promotes it. Moreover, assuming chemical equilibrium, the relationship between the solid composition and the growth conditions was predicted. The results successfully reproduced the typical composition pulling effect. (C) 2017 The Japan Society of Applied Physics

引用

页数：3

共 50 条

[21] Systematic investigation of growth of InP nanowires by metalorganic vapor-phase epitaxy
Bhunia, S
Kawamura, T
Fujikawa, S
Watanabe, Y
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 24 (1-2): : 138 - 142
[22] Study of phase-separated InGaN grown by metalorganic vapor phase epitaxy
Li, P
Chua, SJ
Li, G
Wang, W
Wang, XC
Guo, YP
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1999, 216 (01): : 145 - 149
[23] GROWTH-BEHAVIOR DURING NONPLANAR METALORGANIC VAPOR-PHASE EPITAXY
DEMEESTER, P
VANDAELE, P
BAETS, R
JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) : 2284 - 2290
[24] Analysis of the growth modes for gallium arsenide metalorganic vapor-phase epitaxy
Law, DC
Li, L
Begarney, MJ
Hicks, RF
JOURNAL OF APPLIED PHYSICS, 2000, 88 (01) : 508 - 512
[25] GROWTH OF HIGH-QUALITY GASB BY METALORGANIC VAPOR-PHASE EPITAXY
KOLJONEN, T
SOPANEN, M
LIPSANEN, H
TUOMI, T
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) : 1691 - 1696
[26] GROWTH AND DOPING OF ZNTE AND ZNSE EPILAYERS WITH METALORGANIC VAPOR-PHASE EPITAXY
WOLF, K
STANZL, H
NAUMOV, A
WAGNER, HP
KUHN, W
HAHN, B
GEBHARDT, W
JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 412 - 417
[27] SELECTIVE EPITAXY IN THE CONVENTIONAL METALORGANIC VAPOR-PHASE EPITAXY OF GAAS
KUECH, TF
TISCHLER, MA
POTEMSKI, R
APPLIED PHYSICS LETTERS, 1989, 54 (10) : 910 - 912
[28] Immiscibility behind the metalorganic vapor phase epitaxy of InGaN
Onabe, Kentaro
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SC)
[29] Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy
Kadir, Abdul
Meissner, Christian
Schwaner, Tilman
Pristovsek, Markus
Kneissl, Michael
JOURNAL OF CRYSTAL GROWTH, 2011, 334 (01) : 40 - 45
[30] High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy
Toivonen, J
Hakkarainen, T
Sopanen, M
Lipsanen, H
JOURNAL OF CRYSTAL GROWTH, 2000, 221 (221) : 456 - 460

← 1 2 3 4 5 →